FDN358P mosfet equivalent, p-channel mosfet.
* −1.5 A, −30 V
* RDS(ON) = 125 mW @ VGS = −10 V
* RDS(ON) = 200 mW @ VGS = −4.5 V
* Low Gate Charge (4 nC Typical)
* High Performance Trench Technolo.
load switching and power management, battery charging circuits, and DC/DC conversion.
Features
* −1.5 A, −30 V
.
This P−Channel Logic Level MOSFET is produced using onsemi
advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance.
These devices are well .
Image gallery
TAGS
Download (Size : 291.31KB)