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FDN358P Datasheet P-Channel MOSFET

Manufacturer: onsemi

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Datasheet Details

Part number FDN358P
Manufacturer onsemi
File Size 291.31 KB
Description P-Channel MOSFET
Datasheet download datasheet FDN358P Datasheet

General Description

This P−Channel Logic Level MOSFET is produced using onsemi advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance.

These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and DC/DC conversion.

Overview

DATA SHEET www.onsemi.com MOSFET – Single, P-Channel, POWERTRENCH), Logic Level VDSS −30 V RDS(ON) MAX 125 mW @ −10 V 200 mW @ −4.5 V ID MAX −1.

Key Features

  • 1.5 A,.
  • 30 V.
  • RDS(ON) = 125 mW @ VGS =.
  • 10 V.
  • RDS(ON) = 200 mW @ VGS =.
  • 4.5 V.
  • Low Gate Charge (4 nC Typical).
  • High Performance Trench Technology for Extremely Low RDS(ON).
  • High Power Version of Industry Standard SOT.
  • 23 Package. Identical Pin.
  • Out to SOT.
  • 23 with 30% Higher Power Handling Capability.
  • This Device is Pb.
  • Free and Halide Free.

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