FDN358P Overview
This P−Channel Logic Level MOSFET is produced using onsemi advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and DC/DC conversion.
FDN358P Key Features
- 1.5 A, -30 V
- RDS(ON) = 125 mW @ VGS = -10 V
- RDS(ON) = 200 mW @ VGS = -4.5 V
- Low Gate Charge (4 nC Typical)
- High Performance Trench Technology for Extremely Low RDS(ON)
- High Power Version of Industry Standard SOT-23 Package. Identical
- This Device is Pb-Free and Halide Free
